To realize the pass and isolation modes of the SPST switch, we proposed the design technique of a unit branch consisting of one transistor and one transmission. ROHM 650V GaN HEMT have achieved the industry's highest class FOM (Figure of Merit), which offers great switching losses reduction compared to conventional GaN devices and contributes to higher efficiency in a wide range of power supply systems. Download Browse Figures Versions Notes Abstract In this study, a W-band GaN single-pole single-throw (SPST) switch was designed. ROHM succeeded to increase the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V, making them ideal for use in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices. In order to turn the normally ON GaN-HEMT OFF, it is necessary to deplete a 2DEG (2 dimensional electron gas) layer, so a negative voltage is applied. It is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics.ĭue to its higher switching characteristics and lower ON resistance than silicon devices, GaN devices are expected to contribute to lower power consumption and greater miniaturization of various power supplies and the miniaturization of peripheral components. GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices.
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